Nanoscale Transistors: Device Physics, Modeling and by Mark Lundstrom

By Mark Lundstrom

The continual scaling of transistors within the final half century has been the driver for electronics. The channel size of the transistors in creation this day is lower than 100nm. a wide selection of units also are being explored to counterpoint or perhaps change silicon transistors at molecular scales. Similarities among nanoscale and micronscale transistors exist, yet nanotransistors additionally behave in greatly other ways. for instance, ballistic delivery and quantum results develop into even more vital. To push MOSFETs to their scaling limits and to discover units that can supplement or maybe change them at molecular scale, a transparent realizing of machine physics at nanometer scale is necessary.The e-book offers an outline of the new improvement of concept, modeling, and simulation of nanotransistors for engineers and scientists engaged on nanoscale units. uncomplicated actual photographs and semi-analytical versions, which have been confirmed via precise numerical simulations, are supplied for either evolutionary and innovative nanotransistors.

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13 Coulomb Blockade The discussion in Sec. 12 showed that a small ballistic conductor of the kind sketched in Fig. 6a displays an I-V characteristic of the type shown by the dashed line in Fig. 15. In devices of this type, the contacts are strongly coupled to the device. By "strongly coupled" we mean that the contacts are perfectly absorbing. When an electron in the device exits through a contact, it is completely absorbed; there is no amplitude for reflection at the contact, and an electron that enters the contact is thermalized before it can be re-injected according to the Fermi level of the contact.

16, which consists of a device "island" weakly coupled to two leads that are connected to thermal equilibrium reservoirs. In this case, the I-V characteristics are much different, as shown in the solid line of Fig. 15. The current is not just reduced in magnitude by the weakly coupled contacts; no current at all flows until a voltage sufficient to overcome the Coulomb blockade is applied. This section is a very brief introduction to Coulomb blockade. 15 Voltage (V) The current vs. voltage characteristics of two devices.

9 Introduction The MOSFET ID MOS Electrostatics 2D MOS Electrostatics MOSFET Current vs. 1 Introduction The integrated circuit made modern day information processing and communications systems possible. Its basic functional element is the transistor, most commonly a silicon metal oxide semiconductor field-effect transistor (MOSFET). For the past forty years, MOSFET scahng (the reduction of its critical dimension by a factor of about ^|2 each technology generation, approximately 18 months) has driven Moore's Law (the doubling of the number of transistors per integrated circuit each technology generation).

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