Future Trends in Microelectronics: Frontiers and Innovations by Serge Luryi, Jimmy Xu, Alexander Zaslavsky

By Serge Luryi, Jimmy Xu, Alexander Zaslavsky

Leaders within the box expect the way forward for the microelectronics industry

This 7th quantity of Future developments in Microelectronics summarizes and synthesizes the most recent high-level clinical discussions to emerge from the long run developments in Microelectronics overseas workshop, which has happened each 3 years given that 1995. It covers the complete scope of state of the art themes in microelectronics, from new actual ideas (quantum computing, correlated electrons), to new fabrics (piezoelectric nanostructures, terahertz plasmas), to rising gadget applied sciences (embedded magnetic thoughts, spin lasers, and biocompatible microelectronics).

An perfect booklet for microelectronics pros and scholars alike, this quantity of Future developments in Microelectronics:

  • Identifies the path during which microelectronics is headed, allowing readers to maneuver ahead with study in an educated, effective, and ecocnomic manner
  • Includes twenty-nine contributor chapters by way of overseas experts from best universities, significant semiconductor businesses, and govt laboratories
  • Provides a unified, cohesive exploration of assorted traits in microelectronics, seeking to destiny possibilities, instead of earlier successes

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Dig. VLSISymp. (2011), pp. 6-10. 22. A. M. Ionescu and H. Riel, "Tunnel field-effect transistors as energy-efficient electronic switches," Nature 479, 329 (2011). 23. -W. -N. -G. -T. Park, and J. P. Colinge, "Device design guidelines for nano-scale MuGFETs," Solid State Electronics 5 1 , 505 (2007). 24. B. Majkusiak, T. Janik, and J. Walczak, "Semiconductor thickness effects in the double-gate SOI MOSFET," IEEE Trans. Electron Dev. 45, 1127 (1998). 25. L. Ge, J. G. Fossum, and F. Gamiz, "Mobility enhancement via volume inversion in double-gate MOSFETs," IEEE Intern.

MOVPE, Busan, Korea (2012). 52. N. Ikeda, Y. Niiyama, H. , "GaN power transistors on Si substrates for switching applications," Proc. IEEE 98,1151 (2010). Technology Innovation, Reshaping the Microelectronics Industry 47 53. Y. Uemoto, T. Morita, A. , "GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate," Tech. Dig. IEDM (2009), pp. 165-168. 54. K. Chen and C. Zhou, "Enhancement-mode AlGaN/GaN HEMT and MISHEMT technology," Phys. Status SolidiA 208, 434 (2011).

Samara-Rubio, M. , "High-speed silicon MachZehnder modulator," Optics Express 13, 3129 (2005). 63. W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, "Low-power high-speed Si microdisk modulators," Proc. CLEO (2010), no. 5500977. 64. M. Haurylau, G. Chen, H. , "On-chip optical interconnect roadmap: Challenges and critical directions," IEEE J. Selected Topics Quantum Electronics 12, 1699 (2006). 65. S. G. Wuu, C. C. Wang, D. N. , "A manufacturable back-side illumination technology using bulk-Si substrate for advanced CMOS image sensor," Proc.

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