Dielectric films for advanced microelectronics by Mikhail Baklanov, Karen Maex, Martin Green

By Mikhail Baklanov, Karen Maex, Martin Green

The subject of skinny movies is a space of increasing importance in fabrics technology, electric engineering and utilized strong nation physics; with either learn and commercial functions in microelectronics, laptop production, and actual units. complex, high-performance pcs, high-definition television, broadband imaging platforms, flat-panel screens, robot platforms, and scientific electronics and diagnostics are a number of examples of the miniaturized machine applied sciences that depend upon the usage of skinny movie fabrics.

This booklet offers an in-depth assessment of the radical advancements made by way of the clinical leaders within the quarter of recent dielectric motion pictures for complicated microelectronic purposes. It contains transparent, concise motives of fabric technological know-how of dielectric motion pictures and their challenge for gadget operation, together with high-k, low-k, medium-k dielectric movies and in addition particular positive factors and standards for dielectric motion pictures utilized in the packaging expertise. A extensive variety of comparable issues are coated, from actual ideas to layout, fabrication, characterization, and functions of novel dielectric movies.

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Haveman, J. Schmitz, H. Komiyama and K. Tsubouchi (eds), Materials Research Society, Pittsburg, PA, 417, (1997). [26] A. Grill, V. L. Saenger, C. A. G. C. R. Paraszczak, Mat. Res. Soc. Symp. , 443, 155 (1997). [27] S. Takeishi, H. Kudo, R. Shinohara, M. Hashino, S. Fukuyama, J. Yamaguchi, and M. Yamada, J. Electrochem. , 144, 1797 (1997). [28] Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi, IEDM, 96, 369 (1996). [29] Y. Matsubara, K. Endo, M. Iguchi, N. Ito, K. Aoyama, T.

A. Seifferly, Electrochemical Soc. , PV2000–5, 63 (2000). [53] R. L. L. S. K. D. J. Karwacki, Mat. Res. Symp. , 766, 259 (2003). [54] K. Fujita, H. Miyajima, R. Nakata, and N. Miyashita, Proceedings of the IEEE 2003 Intern. Interconnect Technol. 4 (2003). [55] C. Waldfried, Advanced Dielectric Materials Seminar, organized by Axcelis, Oct. 17, 2004, San-Diego, CA. [56] A. Grill, J. Appl. , 93, 1785 (2003). [57] A. Grill, D. Edelstein, and V. Patel, Conf. Proc. ULSI, XVII, 253 (2002), (MRS, Warrendale, PA).

The peak at 1135 cm−1 is attributed to larger angle Si–O–Si bonds in a cage structure with a bond angle of approximately 150° [15]. The peak at 1063 cm−1 is assigned to the stretching of smaller angle Si–O–Si bonds in an oxide network structure. The peak at 1023 cm−1 can be assigned to stretching of even smaller Si–O–Si bond angle, such as might be encountered in a networked silicon suboxide. While the SiCOH film may contain C–O–C or Si–O–C groups, any contributions from C–O–C or Si–O–C asymmetric stretching vibrations to the absorptions in the 1200–1000 cm−1 region cannot be identified because they overlap with the Si–O–Si asymmetric stretching band [15].

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