By Mikhail Baklanov, Karen Maex, Martin Green
The subject of skinny movies is a space of increasing importance in fabrics technology, electric engineering and utilized strong nation physics; with either learn and commercial functions in microelectronics, laptop production, and actual units. complex, high-performance pcs, high-definition television, broadband imaging platforms, flat-panel screens, robot platforms, and scientific electronics and diagnostics are a number of examples of the miniaturized machine applied sciences that depend upon the usage of skinny movie fabrics.
This booklet offers an in-depth assessment of the radical advancements made by way of the clinical leaders within the quarter of recent dielectric motion pictures for complicated microelectronic purposes. It contains transparent, concise motives of fabric technological know-how of dielectric motion pictures and their challenge for gadget operation, together with high-k, low-k, medium-k dielectric movies and in addition particular positive factors and standards for dielectric motion pictures utilized in the packaging expertise. A extensive variety of comparable issues are coated, from actual ideas to layout, fabrication, characterization, and functions of novel dielectric movies.
Read Online or Download Dielectric films for advanced microelectronics PDF
Similar microelectronics books
It offers a good and worthy to be had speedy connection with the undefined. intensity of the content material can also be correct for advertising and marketing and administration those who want a few wisdom of the sector. The ebook is besides the fact that, too basic for digital Engineer. nonetheless, the images within aren't in reliable answer.
Covers the fundamentals of illness keep an eye on for the newbie, whereas additionally focusing intensive on serious problems with method engineering and circuit production for the extra complex reader. Stresses to readers that what makes the realm of infection regulate special is its ubiquitous nature, throughout all features of semiconductor production.
Parallel Processing With the Propeller--Made effortless! "This ebook should still discover a position on any Propellerhead's bookshelf, among Parallax's Propeller handbook and its Programming and Customizing the Multicore Propeller volumes. " Make: 24 Programming the Propeller with Spin: A Beginner's consultant to Parallel Processing walks you thru the basic talents you want to construct and keep an eye on units utilizing the Propeller chip and its parallel processing surroundings.
- Microelectronic Circuit Design
- Molecular electronics : an experimental and theoretical approach
- Hardware Implementation of Finite-Field Arithmetic
- Nanophysics and nanotechnology: introduction to modern concepts in nanoscience
- Materials Fundamentals of Molecular Beam Epitaxy
Additional info for Dielectric films for advanced microelectronics
Haveman, J. Schmitz, H. Komiyama and K. Tsubouchi (eds), Materials Research Society, Pittsburg, PA, 417, (1997).  A. Grill, V. L. Saenger, C. A. G. C. R. Paraszczak, Mat. Res. Soc. Symp. , 443, 155 (1997).  S. Takeishi, H. Kudo, R. Shinohara, M. Hashino, S. Fukuyama, J. Yamaguchi, and M. Yamada, J. Electrochem. , 144, 1797 (1997).  Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi, IEDM, 96, 369 (1996).  Y. Matsubara, K. Endo, M. Iguchi, N. Ito, K. Aoyama, T.
A. Seifferly, Electrochemical Soc. , PV2000–5, 63 (2000).  R. L. L. S. K. D. J. Karwacki, Mat. Res. Symp. , 766, 259 (2003).  K. Fujita, H. Miyajima, R. Nakata, and N. Miyashita, Proceedings of the IEEE 2003 Intern. Interconnect Technol. 4 (2003).  C. Waldfried, Advanced Dielectric Materials Seminar, organized by Axcelis, Oct. 17, 2004, San-Diego, CA.  A. Grill, J. Appl. , 93, 1785 (2003).  A. Grill, D. Edelstein, and V. Patel, Conf. Proc. ULSI, XVII, 253 (2002), (MRS, Warrendale, PA).
The peak at 1135 cm−1 is attributed to larger angle Si–O–Si bonds in a cage structure with a bond angle of approximately 150° . The peak at 1063 cm−1 is assigned to the stretching of smaller angle Si–O–Si bonds in an oxide network structure. The peak at 1023 cm−1 can be assigned to stretching of even smaller Si–O–Si bond angle, such as might be encountered in a networked silicon suboxide. While the SiCOH film may contain C–O–C or Si–O–C groups, any contributions from C–O–C or Si–O–C asymmetric stretching vibrations to the absorptions in the 1200–1000 cm−1 region cannot be identified because they overlap with the Si–O–Si asymmetric stretching band .