Copper Interconnect Technology by Tapan Gupta

By Tapan Gupta

Since total circuit functionality has depended totally on transistor houses, earlier efforts to augment circuit and process velocity have been interested by transistors to boot. over the past decade, even though, the parasitic resistance, capacitance, and inductance linked to interconnections started to impact circuit functionality and may be the first elements within the evolution of nanoscale ULSI expertise. simply because steel conductivity and resistance to electromigration of bulk copper (Cu) are greater than aluminum, use of copper and low-k fabrics now prevails within the foreign microelectronics undefined. notwithstanding, because the function measurement of the Cu-lines forming interconnects is scaled, resistivity of the strains raises. whilst electromigration and stress-induced voids because of elevated present density turn into major reliability matters. even though copper/low-k expertise has turn into particularly mature, there isn't any unmarried e-book to be had at the promise and demanding situations of those next-generation applied sciences. during this booklet, a pacesetter within the box describes complex laser structures with decrease radiation wavelengths, photolithography fabrics, and mathematical modeling methods to handle the demanding situations of Cu-interconnect expertise.

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In addition to the mechanical stability, the reliability of air gap engineering in nano-scale devices raises several questions regarding, via reliability, electromigration failures [235], degraded barriers, interline leakage and air gap breakdown [236–237]. Recently, IBM has introduced this air gap technology to computer chip manufacturing. The method deployed by IBM causes a vacuum to form in between the copper wires on a computer chip, allowing electrical signals to flow faster (35%), while consuming less power (15%).

At the end of the twentieth century, it was difficult for Frazier to conceive that within 15 years 90 nm technology node will be possible in spite of fundamental physical limitations [138]. But the dream is going to come true because of the development of high molecular weight polymers which are known as photoresist [139]. However, resist slimming and profile control of the side wall have made critical dimension (CD) control more challenging. Although the acceptable 3σ scattering of the gate length is shared by lithography and etching at an optimum ratio, the tolerances in both technologies are approaching their limits.

53). It is hoped that improvements in frequency and circuitry will reduce the number of gates and average gate delay in a clock by 30% [167–168]. In CMOS devices, reduced operating voltage greatly reduces active power. As a result, the maintenance of acceptable off-state leakage with continually decreasing channel lengths will require increased channel doping levels. This will degrade short channel effects of extremely small (nano-size) devices. As a matter of fact, when the device size is less than 90 nm, time-dependent dielectric breakdown (TDDB) and electromigration (EM) phenomena will be the biggest challenges.

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