By Francis Balestra
This ebook deals a accomplished overview of the cutting-edge in cutting edge Beyond-CMOS nanodevices for constructing novel functionalities, common sense and stories devoted to researchers, engineers and scholars. The booklet will really concentrate on the curiosity of nanostructures and nanodevices (nanowires, small slope switches, second layers, nanostructured fabrics, etc.) for complicated greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS common sense and thoughts functions.
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Extra resources for Beyond CMOS Nanodevices 2
IEEE Elec. Dev. , vol. 30, no. 6, pp. 656–658, 2009. , “Depolarizing field and ‘real’ hysteresis loops in nanometer-scale ferroelectric films”, Applied Physics Letters, vol. 89, 2006. , ICCAD 2008, pp. 750–757, 10–13 November 2008. , IEEE Transactions on Electron Devices, vol. 60, pp. 1092–1098, 2013. , “A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs”, Proc. IEDM, p. , “Surface-roughness-induced variability in nanowire InAs tunnel FETs”, IEEE Electron Device Letters, vol.
The SOI substrate is patterned to create silicon NW by using a MESA isolation technique. The stack used to pattern the NWs consisted of a bottom antireflective coating (BARC) layer and a deep ultra-violet (DUV) resist. An ArF laser with an emission wavelength of 193 nm is used. The thickness of the photoresist is adapted to have a proper aspect ratio at the end of trimming. e. NW feature) etching is carried out using the trimmed resist/BARC as a mask. Obviously, the final line width of NWs is mainly determined by the amount of trimmed resist.
Both the top-down and bottom-up approaches are widely studied for the fabrication of NW MOSFET transistors. For the bottom-up approach, the vapor-liquidsolid (VLS) mechanism is the most commonly used route for making semiconductor NWs. The VLS mechanism uses metallic clusters as the nucleation site. If significant progress has been made in realizing NW with VLS growth, there are still a number of outstanding issues associated with the integration of bottom-up grown semiconductor NWs into conventional integrated circuit, design and processing [HOB 12].